? semiconductor components industries, llc, 2006 august, 2006 ? rev. 2 1 publication order number: NTP15N40/d NTP15N40, ntb15n40 preferred device advance information power mosfet 15 amps, 400 volts n ? channel to ? 220 and d 2 pak designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. features ? higher current rating ? lower r ds(on) ? lower capacitances ? lower total gate charge ? tighter v sd specifications ? avalanche energy specified typical applications ? switch mode power supplies ? pwm motor controls ? converters ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drain ? source voltage v dss 400 vdc drain ? gate voltage (r gs = 1.0 m ) v dgr 400 vdc gate ? source voltage ? continuous ? non ? repetitive (t p 10 ms) v gs v gsm 20 40 vdc drain ? continuous ? continuous @ 100 c ? single pulse (t p 10 s) i d i d i dm 15 12 53 adc total power dissipation derate above 25 c p d 202 1.61 watts w/ c operating and storage temperature range t j , t stg ? 55 to 150 c single drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = 100 v, v gs = 10 vdc, i l = 15 a, l = 6 mh, r g = 25 ) e as 675 mj thermal resistance ? junction ? to ? case ? junction ? to ? ambient ? junction ? to ? ambient (note 1.) r jc r ja r ja 0.62 62.5 50 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. this document contains information on a new product. specifications and information herein are subject to change without notice. 15 amperes 400 volts r ds(on) = 260 m preferred devices are recommended choices for future use and best overall value. device package shipping ordering information NTP15N40 to ? 220ab 50 units/rail to ? 220ab case 221a style 5 1 2 3 4 http://onsemi.com n ? channel d s g marking diagrams and pin assignments ntx15n40 = device code ll = location code y = year ww = work week NTP15N40 llyww gate source drain drain ntb15n40 llyww gate source drain drain 1 2 3 4 d 2 pak case 418b style 2 ntb15n40 d 2 pak 50 units/rail ntb15n40t4 d 2 pak 800/tape & reel
NTP15N40, ntb15n40 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (v gs = 0 vdc, i d = 0.25 madc) temperature coefficient (positive) v (br)dss 400 ? ? 510 ? ? vdc mv/ c zero gate voltage collector current (v ds = 400 vdc, v gs = 0 vdc) (v ds = 400 vdc, v gs = 0 vdc, t j =125 c) i dss ? ? ? ? 10 100 adc gate ? body leakage current (v gs = 20 vdc, v ds = 0) i gss(f) i gss(r) ? ? ? ? 100 100 nadc on characteristics (note 1) gate threshold voltage i d = 0.25 ma, v ds = v gs temperature coefficient (negative) v gs(th) 2.0 ? 2.5 6.8 4.0 ? vdc mv/ c static drain ? to ? source on ? resistance (v gs = 10 vdc, i d = 7.5 adc) r ds(on) ? 230 260 mohm drain ? to ? source on ? voltage (v gs = 10 vdc, i d = 15 adc) (v gs = 10 vdc, i d = 7.5 adc, t j = 125 c) v ds(on) ? ? ? ? 4.7 4.1 vdc forward transconductance (v ds = 15 vdc, i d = 7.5 adc) g fs 10 13 ? mhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 1800 2520 pf output capacitance c oss ? 630 880 transfer capacitance c rss ? 40 80 switching characteristics (note 2) turn ? on delay time (v dd = 200 vdc, i d = 15 adc, v gs = 10 vdc, r g = 9.1 ) t d(on) ? 13 30 ns rise time t r ? 40 80 turn ? off delay time t d(off) ? 49 100 fall time t f ? 46 90 gate charge (v ds = 320 vdc, i d = 15 adc, v gs = 10 vdc) q t ? 37 50 nc q 1 ? 8.0 ? q 2 ? 12 ? q 3 ? 20 ? source ? drain diode characteristics forward on ? voltage (note 1) (i s = 15 adc, v gs = 0 vdc) (i s = 15 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? 0.90 0.80 1.0 ? vdc reverse recovery time (i s = 15 adc, v gs = 0 vdc, di s /dt = 100 a/ s) t rr ? 290 ? ns t a ? 170 ? t b ? 120 ? reverse recovery stored charge q rr ? 3.5 ? c internal package inductance internal drain inductance (measured from contact screw on tab to center of die) (measured from the drain lead 0.25 from package to center of die) l d ? ? 3.5 4.5 ? ? nh internal source inductance (measured from the source lead 0.25 from package to source bond pad) l s ? 7.5 ? 1. pulse test: pulse width 300 s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature.
NTP15N40, ntb15n40 http://onsemi.com 3 package dimensions to ? 220 three ? lead to ? 220ab case 221a ? 09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j d 2 pak case 418b ? 03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b
NTP15N40, ntb15n40 http://onsemi.com 4 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NTP15N40/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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